InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement GS-UVV-3535LCW

Product Description:

GS-UVV-3535LCW InGaN-based UV Photodiode UV LED Monitoring UV Radiation Dose Measurement UV Curing



Features:

General Features:

l Indium Gallium Nitride Based Material

l Photovoltaic mode operation

l SMD 3535 ceramic package with quartz window

l High responsivity and low dark current

Applications: UV LED Monitoring, UV radiation dose measurement, UV Curing

Parameters Symbol Value Unit Maximum ratings

Operation temperature range Topt -25-85 oC

Storage temperature range Tsto -40-85 oC

Soldering temperature (3 s) Tsol 260 oC

Reverse voltage Vr-max -10 V

General characteristics (25 oC) Chip size A 1 mm2 Dark current (Vr = -1 V) Id <1 nA Temperature coefficient Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 60 pF> <1 nA Temperature coefficient Tc 0.065 %/ oC Capacitance (at 0 V and 1 MHz) Cp 1.7 pF>

<1 nA Temperature coefficient (@265 nm) Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 18 p>



Specifications:

Wavelength of peak responsivisity λ p 390 nm
Peak responsivisity (at 385 nm) Rmax 0.289 A/W
Spectral response range (R=0.1×Rmax) 290-440 nm
UV-visible rejection ratio (Rmax/R450 nm) - >10 -