S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band

Product Description:

S1337-66BQ Infrared Silicon Photodiode Is Used For Precise Photometric Determination In Ultraviolet To Infrared Band



Features:

Suitable for precise photometric determination from ultraviolet to infrared band

High UV sensitivity: QE = 75% (λ=200 nm)

Low capacitance

Measurement conditions: Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz



Specifications:

Peak sensitivity wavelength (typical value) 960 nm
Sensitivity (typical value) 0.5 A/W
Dark current (maximum) 100 pA
Rise time (typical value) 1 mu s
Junction capacitance (typical value)
380 pF