S1226-8BQ U Type Infrared Photoelectric Sensor For Precision Photometry

Product Description:

S1226-8BQ Silicon Photodiodes Are Suitable For UV To Visible Light Precision Photometry To Suppress NIR Sensitivity



Features:

● High UV sensitivity: QE = 75% (λ=200 nm)

● Suppress NIR sensitivity

● Low dark current

● High reliability

Dark current (maximum) 20 pA

Rise time (typical value). 2 mu s

Junction capacitance (typical value) 1200 pF

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz



Specifications:

Reverse voltage (Max.) 5V
spectral response range is 190 to 1000 nm
peak sensitivity wavelength (typical value) was 720 nm
Type infrared photoelectricity