S12060-10 Highly Sensitive Si Photodiode In Metal Package For Near Infrared Sensing

Product Description:
The UV Photodiode Sensor is a type of near infrared device that is designed to detect ultraviolet to infrared light. It features a photosensitive area of φ1mm and has a typical breakdown voltage of 200V. This device also has a low capacitance and is encased in a metal package, making it highly durable and resistant to external environmental factors. Furthermore, it has a temperature coefficient of breakdown voltage of 0.4V/℃, making it suitable for applications that require robust operation in varying temperatures. This UV Photodiode Sensor is ideal for use in a variety of applications, including medical imaging, laser ranging, and robotic navigation.


Features:
Product Name: UV Photodiode Sensor
Spectral response range: 400 To 1000 Nm
Photosensitive area: φ1 Mm
Package: Metal
Dark current (max.): 2 NA
Terminal capacitance (typ.): 6 PF
Plastic Package
For UV to IR
Low Capatitance

Technical Parameters:
Parameters Values
Terminal capacitance (typ.) 6 PF
Spectral response range 400 To 1000 Nm
Gain (typ.) 100
Cutoff frequency (typ.) 600 MHz
Photosensitive area φ1 Mm
Dark current (max.) 2 NA
Package Category TO-18
Temperature coefficient of breakdown voltage (typ.) 0.4 V/℃
Type Near Infrared Type
Package Metal
Si Photodiode Yes
Plastic Package No