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S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band

S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band

$59.00


Product Description
S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 nm Band



Features:

Temperature coefficient of breakdown voltage:
0.4 V/°C
High-speed response
High sensitivity and low noise



Applications:

Optical rangefinders
FSO
Optical fi ber communications



Datasheet:

Maximum sensitivity wavelength (typical) 800 nm
Sensitivity wavelength range 400 to 1000 nm
Photosensitivity (Typical) 0.5 A/W
Dark current (maximum) 0.5 nA
Cutoff Frequency (Typical) 1000 MHz
Junction capacitance (typical) 1.5 pF
Breakdown voltage (typical) 200 V
Temperature coefficient of breakdown voltage (typ.) 0.4 V/°C
Gain ratio (typical value) 100

Add to Cart:

  • Model: S12060-02
  • 80 Units in Stock


Processing Time
  • Ships in 24 hours: Processing Time is guaranteed to be shorter than 24 hours.
  • Typical Processing Time: 3 - 12 days

We ship to over 200 countries worldwide!