UVA GaN-Based UV Photodiode Sensor GS-AB-S Photovoltaic mode operation

Product Description:

GS-AB-S GaN-based UV photodiode



Features:

Broad band UVA+UVB+UVC photodiode

Photovoltaic mode operation

TO-46metal housing

Good visible blindness

High responsivity and low dark current

UV index monitoring, UV radiation dose measurement, flame detection

Specification



Parameters Symbol Value Unit
Maximum ratings
Operation temperature range Topt -25-85 oC
Storage temperature range Tsto -40-85 oC
Soldering temperature (3 s) Tsol 260 oC
Reverse voltage Vr-max -10 V
General characteristics (25 oC)
Chip size A 1 mm2
Dark current (Vr = -1 V) Id <1 nA
Temperature coefficient (@265 nm) Tc 0.05 %/ oC
Capacitance (at 0 V and 1 MHz) Cp 18 pF
Spectral response characteristics (25 oC)
Wavelength of peak responsivity λ p 355 nm
Peak responsivity (at 355 nm) Rmax 0.20 A/W
Spectral response range (R=0.1×Rmax) - 210-370 nm
UV-visible rejection ratio (Rmax/R400 nm) - >104 -


Specifications:

Specifications Parameters
Peak wavelength 355NM
Light sensitivity 0.20A/W
Rise time 3US
Test conditions typical values, Ta=25°