Silicon S16765 01MS Infrared Photoelectric Sensor Replace S1133

Product Description
Silicon S16765 01MS Infrared Photoelectric Sensor Replace S1133



Photodiode PIN silicon photocell S16765-01MS can completely replace S1133



Features:

Hamamatsu photosensitive photodiode silicon photocell

High performance, High reliability Si PIN photodiodes

High performance, high reliability silicon PIN photodiode

Parameter name value

Encapsulated ceramic

Sensitive zone diameter/length mm 2.8

The minimum wavelength is 320 nm

The maximum wavelength is 730 nm

The peak wavelength is 560 nm

Peak sensitivity A/W 0.3

Maximum dark current (nA) 0.01

Rsh Ω (G) 100

TR (us) 2.5

CT (pF) 700

Part of the photodetector covers common photodiodes, avalanche diodes, and photomultiplier tubes that form from x-rays to ultraviolet, visible light

, near infrared, up to 3000nm in the middle infrared band;Package form from Chip Level to Components Level, Module

Level of various semiconductor laser diodes

Professional sales of Japan hamamatsu optoelectronic devices, optical reception, silicon photodiode, photoelectric detection devices optical detection components



Specifications:

Welding temperature 260℃
Light source power 0.1u~100mW/cm²
Spectral detection range 25℃, 10% of R
Reverse voltage 3V