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S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode

S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode

$45.00


Product Description:

S2386-8K Silicon Photodiodes Are Used For Universal Photometric Determination In Visible To Near Infrared Bands



Features:

Suitable for visible light to near infrared band, universal photometric determination

Product features

● High sensitivity in visible to near infrared band

● Low dark current

● High reliability

● High linearity

Rise time (typical value). 10 mu s

Junction capacitance (typical value) 4300 pF

Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz



Specifications:

spectral response range is 320 to 1100 nm
Peak sensitivity wavelength (typical value) 960 nm
Sensitivity (typical value) 0.6 A/W
Dark current (Max.) 50 pA

Add to Cart:

  • Model: S2386-8K
  • 100 Units in Stock


Processing Time
  • Ships in 24 hours: Processing Time is guaranteed to be shorter than 24 hours.
  • Typical Processing Time: 3 - 12 days

We ship to over 200 countries worldwide!