S12915 33R Silicon Photodiode Sensor For General Photometer

Product Description
S12915 33R Silicon Photodiode Sensor For General Photometer



Silicon Photodiode S12915-33R For General Photometer In Visible To Infrared Band



Features:

Charter new traditional product unit

Model S12915-33R S2387-33R -

Window material plastic potting seal -

Package 6 x 7.6mm

The receiving surface size is 2.4 × 2.4mm

Effective photosensitive area 5.7 mm2

The maximum reverse voltage is 30 V

Operating temperature -20 ~ +60 ℃

Storage temperature -20 ~ +80 ℃

The sensitivity wavelength ranges from 340 nm to 1100 nm

The maximum sensitivity wavelength is 960 nm

The typical sensitivity is 0.64 0.58A /W

The typical short-circuit current is 5.7 5.8 μA

Maximum dark current is 5 pA

ID temperature coefficient 1.12 times /°C

The typical rise time is 1.6 1.8 μs

Junction capacitance typical value 680 730 pF

Shunt resistance typical value 50 GΩ

Noise equivalent power 9.0 × 10-16 9.9 × 10-16 W/Hz1/2

Typical value Ta=25°C, sensitivity: λ=λp, dark current: VR=10 mV, rise time: VR=0 V, f=10 kHz, shvolt resistance: VR=10 mV, noise equivalent power: VR=0 V, λ=λp, unless otherwise stated



Specifications:

typical rise time is 1.6 1.8 μs
Junction capacitance typical value 680 730 pF
Shunt resistance typical value 50 GΩ
ID temperature coefficient 1.12 times /°C