G8370-81 Infrared Photoelectric Sensor Low PDL , InGaAs PIN Photodiode

Product Description:

G8370-81 InGaAs PIN Photodiode Low PDL(Polarization Dependent Loss)



Features:

Low PDL(polarization dependent loss)

InGaAs PIN photodiode G8370-81 has low PDL (polarization dependent loss), large shitter resistance and very low noise at 1.55μm.

Product features

Low PDL(polarization dependent loss)

● Low noise, low dark current

● Large photographic area

● Photosensitive area: φ1 mm

Noise equivalent power (typical value) 2×10-14 W/ hz1/2

Measurement conditions TYP.TA =25 ℃, Photosensitivity: λ=λp, Dark Current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 ω, -3 dB, Terminal capacitance: VR=1 V, F =1 MHz, unless otherwise noted



Specifications:

peak sensitivity wavelength (typical value) was 1.55 μm
Sensitivity (typical value) 1.1 A/W
Dark current (maximum) 5 nA
Cutoff frequency (typical value) 35 MHz
Junction capacitance (typical value) 90 pF
Noise equivalent power (typical value) 2×10-14 W/ hz1/2