Sapphire Window UV Photodiode Sensor For UV Photocatalytic Monitoring

Product Description:

GT-UV400-L GaN UV Sensor For UV Photocatalytic Monitoring



Features:

General Features: l Indium Gallium Nitride Based Material l Photovoltaic mode operation l TO-46 metal housing l High responsivity and low dark current Applications: UV LED Monitoring, UV radiation dose measurement, UV Curing Specifications: Parameters Symbol Value Unit Maximum ratings Operation temperature range Topt -25-85 oC Storage temperature range Tsto -40-85 oC Soldering temperature (3 s) Tsol 260 oC Reverse voltage Vr-max -10 V General characteristics (25 oC) Chip size A 1 mm2 Dark current (Vr = -5 V) Id

<1 nA Temperature coefficient Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 60 pF >



Specifications:

Wavelength of peak responsivisity λ p 375 nm
Peak responsivisity (at 385 nm) Rmax 0.243 A/W
Spectral response range (R=0.1×Rmax) 200-400 nm
UV-visible rejection ratio (Rmax/R450 nm) - >104 -