S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector

Product Description:

S7686 Silicon Photodiode Is Used To Measure Sensitivity Close To Spectral Luminescence Efficiency



Features:

S7686 is a silicon photodiode whose spectral response characteristics are closer to the sensitivity (spectral luminescence efficiency) of the human eye than traditional visible light compensation sensors (S1133, etc.).

The spectral response is similar to CIE spectral luminescence efficiency

Ceramic package, high reliability

Photographic area: 2.4 × 2.8mm

High speed response: 0.5 US (VR=0 V, RL=1 kω)

Fs value: 8% typical value (vertical light incidence)

Rise time (typical value). 0.5 u s

Junction capacitance (typical value) 200 pF

Measurement condition TYP.TA =25 ℃, unless otherwise noted,Photosensitivity: λ=λp, Dark current: VR=1V, Terminal capacitance: VR=0 V, f=10 kHz



Specifications:

Reverse voltage (Max.) 10V
spectral response range is 480 to 660 nm
peak sensitivity wavelength (typical value) was 550 nm
Sensitivity (typical value) 0.38 A/W
Dark current (maximum) 20 pA