S6931 01 Infrared Photoelectric Sensor Molded Into A Silicon Photodiode

Product Description
S6931 01 Infrared Photoelectric Sensor Molded Into A Silicon Photodiode



S6931-01 Is Molded Into A Silicon Photodiode Enclosed In Transparent Plastic



Features:

Detailed parameter

Receiving surface 2.4 × 2.8mm

The pixel number is 1

Packaging plastics

Cooling non-cooling type

Reverse voltage (Max.) 10 V

Sensitivity wavelength range 320 to 1000 nm

Maximum sensitivity wavelength (typical value) 720 nm

Photosensitivity (typical value) 0.48A /W

Dark current (Max.) 20 pA

Rise time (typical value) 0.5μs

Junction capacitance (typical value) 200 pF

Typical values Ta=25°C, sensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated



Specifications:

Dark current (Max.) 10V
Operating temperature Topr
Storage temperature Tstg
Center wavelength CWL
Photosensitivity λ=254 nm