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S1227-16BQ Infrared Photoelectric Sensor 190 to 1000 nm For Precise Photometry

S1227-16BQ Infrared Photoelectric Sensor 190 to 1000 nm For Precise Photometry

$69.00


Product Description:

S1227-16BQ Silicon Photodiodes Are Used For Precise Photometry From Ultraviolet To Visible Light



Features:

Suitable for UV to visible light, precision photometric determination; Suppression of infrared band sensitivity

Product features

● High UV sensitivity (quartz window type) : QE = 75% (λ=200 nm)

● Inhibition of infrared band sensitivity

● Low dark current

Rise time (typical value). 0.5 u s

Junction capacitance (typical value) 170 pF

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz



Specifications:

spectral response range is 190 to 1000 nm
peak sensitivity wavelength (typical value) was 720 nm
Sensitivity (typical value) 0.36 A/W
Dark current (maximum) 5 pA

Add to Cart:

  • Model: S1227-16BQ
  • 100 Units in Stock


Processing Time
  • Ships in 24 hours: Processing Time is guaranteed to be shorter than 24 hours.
  • Typical Processing Time: 3 - 12 days

We ship to over 200 countries worldwide!